DocumentCode
420435
Title
Charge trapping and intermodulation in HEMTs
Author
Brinkhoff, James ; Parker, Anthony E.
Author_Institution
Dept. of Electron., Macquarie Univ., Australia
Volume
2
fYear
2004
fDate
6-11 June 2004
Firstpage
799
Abstract
Charge trapping effects in high electron mobility transistors (HEMTs) are linked to anomalous intermodulation behavior, known as memory effects. This behavior can be observed clearly as changes in intermodulation levels with tone-spacing, and two-tone asymmetry. A Volterra-series analysis of an HEMT with trapping predicts the distortion accurately, and allows an understanding of the mechanisms involved.
Keywords
Volterra series; electron traps; high electron mobility transistors; hole traps; intermodulation distortion; linearisation techniques; semiconductor device models; HEMT; anomalous intermodulation behavior; charge trapping; high electron mobility transistors; memory effects; tone spacing; two tone asymmetry; Bandwidth; Electron traps; Equivalent circuits; Frequency; HEMTs; Impedance measurement; MODFETs; Predictive models; Transfer functions; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-8331-1
Type
conf
DOI
10.1109/MWSYM.2004.1339084
Filename
1339084
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