Title :
Charge trapping and intermodulation in HEMTs
Author :
Brinkhoff, James ; Parker, Anthony E.
Author_Institution :
Dept. of Electron., Macquarie Univ., Australia
Abstract :
Charge trapping effects in high electron mobility transistors (HEMTs) are linked to anomalous intermodulation behavior, known as memory effects. This behavior can be observed clearly as changes in intermodulation levels with tone-spacing, and two-tone asymmetry. A Volterra-series analysis of an HEMT with trapping predicts the distortion accurately, and allows an understanding of the mechanisms involved.
Keywords :
Volterra series; electron traps; high electron mobility transistors; hole traps; intermodulation distortion; linearisation techniques; semiconductor device models; HEMT; anomalous intermodulation behavior; charge trapping; high electron mobility transistors; memory effects; tone spacing; two tone asymmetry; Bandwidth; Electron traps; Equivalent circuits; Frequency; HEMTs; Impedance measurement; MODFETs; Predictive models; Transfer functions; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1339084
