A high gain L-band GaAs FET technology for 28 V operation

Author

Inoue, K. ; Nagahara, M. ; Ui, N. ; Haematsu, H. ; Sano, S. ; Fukaya, J.

Author_Institution

Microwave Commun. Devices Group, Fujitsu Quantum Devices Ltd., Japan

Volume

2

fYear

2004

fDate

6-11 June 2004

Firstpage

821

Abstract

This paper describes a successfully developed L-band FET for 28 V operation. The FET structure was adequately designed to realize breakdown voltage of 84 V and a gradual doping channel was adopted to improve the linearity. The FET realizes record operation voltage up to 42 V. The FET also exhibits power density of 1.05 W/mm, linear gain of 17.2 dB and IM3 of -33 dBc. A strait IM3 profile is obtained and so-called "plateau" profile is extinct. In addition, the estimated MTTF at Tch of 145°C is longer than 4×10⁶ hours.

Keywords

III-V semiconductors; gallium arsenide; insulated gate field effect transistors; intermodulation distortion; semiconductor device breakdown; 145 degC; 17.2 dB; 28 V; 42 V; 84 V; FET structure; GaAs; breakdown voltage; gradual doping channel; high gain L-band GaAs FET technology; linearity; plateau profile; power density; Breakdown voltage; Gallium arsenide; High power amplifiers; L-band; Linearity; Microwave FETs; Neodymium; Operational amplifiers; Power generation; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1339091

Filename

1339091