DocumentCode
420457
Title
An ultra-high power amplifier and switch arrays on single wafer
Author
Guo, Jiquan ; Tantawi, Sami G.
Author_Institution
Stanford Linear Accel. Center, Menlo Park, CA, USA
Volume
2
fYear
2004
fDate
6-11 June 2004
Firstpage
1013
Abstract
A novel X-band single wafer amplifier and switch arrays are designed to work in a high Q circular waveguide cavity. This design can significantly reduce power leakage at the plane where the wafer is inserted, which is essential to achieve high Q and ultrahigh power. The array is achieved in an overmoded circular waveguide. The mode being exited and/or controlled by the array is the TE01 mode. We hope that the use of an overmoded waveguide and the TE01 mode would allow us to extend the power handling capabilities of the device by orders of magnitude beyond the state-of-the-art for semiconductor devices. We present the general design of the array and show several implementations.
Keywords
UHF power amplifiers; arrays; circular waveguides; microwave switches; phase locked oscillators; TE01 mode; X-band single wafer amplifier; high Q circular waveguide cavity; overmoded circular waveguide; power leakage; semiconductor device; switch array; ultra-high power amplifier; ultrahigh power; Linear particle accelerator; Microwave amplifiers; Power amplifiers; Power semiconductor switches; Radio frequency; Radiofrequency amplifiers; Semiconductor devices; Semiconductor diodes; Semiconductor waveguides; Waveguide discontinuities;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-8331-1
Type
conf
DOI
10.1109/MWSYM.2004.1339153
Filename
1339153
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