DocumentCode :
420457
Title :
An ultra-high power amplifier and switch arrays on single wafer
Author :
Guo, Jiquan ; Tantawi, Sami G.
Author_Institution :
Stanford Linear Accel. Center, Menlo Park, CA, USA
Volume :
2
fYear :
2004
fDate :
6-11 June 2004
Firstpage :
1013
Abstract :
A novel X-band single wafer amplifier and switch arrays are designed to work in a high Q circular waveguide cavity. This design can significantly reduce power leakage at the plane where the wafer is inserted, which is essential to achieve high Q and ultrahigh power. The array is achieved in an overmoded circular waveguide. The mode being exited and/or controlled by the array is the TE01 mode. We hope that the use of an overmoded waveguide and the TE01 mode would allow us to extend the power handling capabilities of the device by orders of magnitude beyond the state-of-the-art for semiconductor devices. We present the general design of the array and show several implementations.
Keywords :
UHF power amplifiers; arrays; circular waveguides; microwave switches; phase locked oscillators; TE01 mode; X-band single wafer amplifier; high Q circular waveguide cavity; overmoded circular waveguide; power leakage; semiconductor device; switch array; ultra-high power amplifier; ultrahigh power; Linear particle accelerator; Microwave amplifiers; Power amplifiers; Power semiconductor switches; Radio frequency; Radiofrequency amplifiers; Semiconductor devices; Semiconductor diodes; Semiconductor waveguides; Waveguide discontinuities;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN :
0149-645X
Print_ISBN :
0-7803-8331-1
Type :
conf
DOI :
10.1109/MWSYM.2004.1339153
Filename :
1339153
Link To Document :
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