Title :
Modeling high power RF LDMOS amplifiers
Author :
Goverdhanam, Kavita ; Lott, Joel ; Moinian, Shahriar ; Li, Ru ; Zell, Jeff ; Perelli, Steve ; Dai, Wenhua ; Frei, Michel ; Farrell, Don ; Bell, D. Averill ; Lau, Ed
Author_Institution :
Agere Syst., USA
Abstract :
This paper focuses on the package model extraction methodology and large signal model verification of high power RF LDMOS amplifiers. Results validating the extracted package models are presented. Accurate models of the power amplifier that also allow for simulations of the linearity aspects, such as IMD3 and IMD5 is presented. Comparisons between measured and modeled data is presented to validate the package models.
Keywords :
S-parameters; equivalent circuits; power amplifiers; power semiconductor devices; radiofrequency amplifiers; semiconductor device models; semiconductor device packaging; IMD3 model; IMD5 model; S-parameters; equivalent circuit; high power RF LDMOS amplifiers modeling; package model extraction; two port test packages; Circuit simulation; Circuit testing; Data mining; High power amplifiers; Linearity; Packaging; Power amplifiers; Power system modeling; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1339169
