Title :
InGaP/GaAs HBT RF power amplifier with compact ESD protection circuit
Author :
Ma, Yintat ; Li, G.P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Irvine, CA, USA
Abstract :
A 5.4-6.0 GHz InGaP/GaAs HBT power amplifier with a compact 2000 Vesd on-chip electrostatic discharge (ESD) protection circuit that has low loading capacitance of less than 0.1 pF and does not degrade RF and output power performance is presented for wireless LAN application. In contrast to the traditional diode string, a diode triggered Darlington pair is implemented as the ESD protection circuit. This summary discusses the operation principle, ESD protection performance and RF loading of the ESD protection circuit, and the power amplifier performance with this ESD protection circuit.
Keywords :
III-V semiconductors; MMIC power amplifiers; electrostatic discharge; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave amplifiers; power integrated circuits; wireless LAN; 0.1 pF; 5.4 to 6 GHz; InGaP-GaAs; InGaP-GaAs HBT RF power amplifier; compact ESD protection circuit; compact electrostatic discharge protection circuit; diode triggered Darlington pair; loading capacitance; radiofrequency power amplifier; wireless LAN application; Capacitance; Circuits; Diodes; Electrostatic discharge; Gallium arsenide; Heterojunction bipolar transistors; Power amplifiers; Protection; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1339195
