DocumentCode
421405
Title
Low power gate-level design with mixed-Vth (MVT) techniques
Author
Sill, Frank ; Grassert, Frank ; Timmermann, Dirk
Author_Institution
Fac. of Comput. Sci. and Electr. Eng., Rostock Univ., Germany
fYear
2004
fDate
7-11 Sept. 2004
Firstpage
278
Lastpage
282
Abstract
The reduction of leakage power has become an important issue for high performance designs. One way to achieve low-leakage and high performance designs is the use of multi-threshold techniques. In this paper, a new mixed-Vth (MVT) CMOS design technique is proposed, which uses different threshold voltages within a logic gate. This new technique allows the reduction of leakage power, while the performance stays constant. A set of algorithms is given assigning optimal distribution of gates. Results indicate that the new MVT approach can provide up to 40% leakage reduction by constant performance compared to dual-Vth (DVT) gate-level techniques.
Keywords
CMOS logic circuits; MOSFET; integrated circuit design; leakage currents; logic gates; mixed analogue-digital integrated circuits; MOS transistor; leakage power reduction; logic gate; low power gate level design; mixed Vth CMOS design; multithreshold technique; threshold voltage; Algorithm design and analysis; CMOS logic circuits; CMOS technology; Electronics industry; Hardware; Leakage current; Logic design; Logic gates; Switches; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuits and Systems Design, 2004. SBCCI 2004. 17th Symposium on
Print_ISBN
1-58113-947-0
Type
conf
DOI
10.1109/SBCCI.2004.240983
Filename
1360584
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