DocumentCode
421425
Title
Effects of wavelength and doping concentration on silicon damage threshold
Author
Liu, Hsiao-Hua ; Mourou, Gerard ; Picard, Yoosuf N. ; Yalisove, Steven M. ; Juhasz, Tibor
Author_Institution
Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA
Volume
2
fYear
2004
fDate
16-21 May 2004
Abstract
Our damage experiment shows threshold fluence does not decrease with increasing doping concentration and its dependence on wavelength is weak, with photon energies above or below bandgap. Our results indicate impact ionization is the dominating mechanism.
Keywords
impact ionisation; laser beam effects; semiconductor doping; silicon; Si; doping concentration; impact ionization; laser damage; silicon damage threshold; threshold fluence; wavelength effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1360614
Link To Document