DocumentCode :
421436
Title :
Spatially-indirect photo- and electro-luminescence in the 1.3 /spl mu/m range at room temperature
Author :
Ru, G. ; Yan, J. ; Yu, X. ; Raj, M. ; Choa, F.S. ; Khurgin, J.B.
Author_Institution :
Dept. of CSEE, Maryland Univ., Baltimore, MD, USA
Volume :
2
fYear :
2004
fDate :
16-21 May 2004
Abstract :
We have observed strong spatially-indirect photo- and electro-luminescence in type II InGaAsP/InGaAlAs MQW structures in the 1.3 /spl mu/m range at room temperature.
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; 1.3 mum; 20 degC; InGaAsP-InGaAlAs; electroluminescence; multiple quantum wells; photoluminescence; room temperature; spatially-indirect luminescence; type II MQW structures;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
Type :
conf
Filename :
1360626
Link To Document :
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