Title :
Reliable RT CW operation of GaInAsP/InP multiple-quantum-wire lasers fabricated by dry etching and regrowth method
Author :
Yagi, Hideki ; Sano, Takuya ; Ohira, Kazuya ; Plumwongrot, Dhanorm ; Maruyama, Takeo ; Haque, Anisul ; Arai, Shigehisa
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
A RT-CW operation of GaInAsP/InP 5-stacked quantum-wire lasers (23 nm wide) fabricated by EB lithography, CH/sub 4//H/sub 2/-RIE and OMVPE regrowth was achieved. No significant changes in performance were observable even after 7100 h under the RT-CW condition.
Keywords :
III-V semiconductors; MOCVD; electron beam lithography; gallium arsenide; gallium compounds; optical fabrication; quantum well lasers; semiconductor device reliability; semiconductor growth; semiconductor quantum wires; sputter etching; vapour phase epitaxial growth; 20 degC; 23 nm; 7100 h; CH/sub 4//H/sub 2/-RIE; EB lithography; GaInAsP-InP; GaInAsP/InP multiple-quantum-wire lasers; OMVPE regrowth; continuous-wave operation; dry etching; regrowth method; reliable laser operation; room temperature operation;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
