Title :
Strain engineered Ge photodetectors on Si platform for broad band optical communications
Author :
Liu, Jifeng ; Cannon, Douglas D. ; Wada, Kazumi ; Jongthammanurak, S. ; Danielson, David T. ; Michel, Jurgen ; Kimerling, Lionel C.
Author_Institution :
Dept. of Mater. Sci. & Eng., MIT, Cambridge, MA, USA
Abstract :
This paper presents a strain engineering of Ge photodetectors on Si to cover both C-band and L-band. This high responsivity, Si-CMOS compatible device has promising applications in the next generation of broad band optical communications.
Keywords :
CMOS integrated circuits; germanium; integrated optoelectronics; optical communication equipment; photodetectors; silicon; C-band; Ge photodetectors; Ge-Si; L-band; Si platform; Si-CMOS compatible device; broad band optical communications; strain engineered photodetectors;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
