• DocumentCode
    421512
  • Title

    Strain engineered Ge photodetectors on Si platform for broad band optical communications

  • Author

    Liu, Jifeng ; Cannon, Douglas D. ; Wada, Kazumi ; Jongthammanurak, S. ; Danielson, David T. ; Michel, Jurgen ; Kimerling, Lionel C.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., MIT, Cambridge, MA, USA
  • Volume
    2
  • fYear
    2004
  • fDate
    16-21 May 2004
  • Abstract
    This paper presents a strain engineering of Ge photodetectors on Si to cover both C-band and L-band. This high responsivity, Si-CMOS compatible device has promising applications in the next generation of broad band optical communications.
  • Keywords
    CMOS integrated circuits; germanium; integrated optoelectronics; optical communication equipment; photodetectors; silicon; C-band; Ge photodetectors; Ge-Si; L-band; Si platform; Si-CMOS compatible device; broad band optical communications; strain engineered photodetectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2004. (CLEO). Conference on
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-55752-777-6
  • Type

    conf

  • Filename
    1360704
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=421512