Title :
Measurement of two-photon absorption in AlGaInAs strained-layer multiple-quantum-well devices at communications wavelengths
Author :
Zilkie, A.J. ; Morandotti, R. ; Smith, P.W.E. ; Aitchison, J.S. ; Hinzer, K. ; Knight, D.G. ; White, J.K. ; Hutchings, D.C.
Author_Institution :
Edward S. Rodgers Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
Two-photon absorption was measured in AlGaInAs strained-layer multiple-quantum-well active waveguide devices at wavelengths near the 1575 nm band-gap. Values around 400 cm/GW were obtained, much larger than that predicted by a commonly used scaling law.
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium compounds; indium compounds; nonlinear optics; optical communication; optical waveguides; quantum well lasers; semiconductor optical amplifiers; two-photon processes; AlGaInAs; AlGaInAs strained-layer multiple-quantum-well active waveguide devices; band gap; communications wavelengths; scaling law; two-photon absorption;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
