DocumentCode
421725
Title
Passively mode-locked, picosecond pulse vertical cavity surface emitting diode laser at 15 GHz repetition rates
Author
Zhang, Qiang ; Jasim, Khalil ; Nurmikko, AV ; Ippen, Erich ; Mooradian, Aram ; Carey, Glen ; Ha, Wonill
Author_Institution
Div. of Eng., Brown Univ., Providence, RI, USA
Volume
2
fYear
2004
fDate
16-21 May 2004
Abstract
We report a passively mode-locked vertical-cavity surface emitting laser diode (980 nm) at up to 15 GHz repetition rate with pulse duration of 15 psec, which incorporates a reverse-biased InGaAs multiple quantum well saturable absorber.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; optical pulse generation; optical saturable absorption; quantum well lasers; surface emitting lasers; 15 GHz; 15 ps; 980 nm; InGaAs; passive mode-locking; picosecond pulse generation; reverse-biased InGaAs multiple quantum well saturable absorber; vertical cavity surface emitting diode laser;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1360940
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