Title :
Faraday rotation in semiconductors for photonic integration
Author :
Zaman, Tauhid ; Guo, Xiaoyun ; Ram, Rajeev J.
Author_Institution :
Res. Lab of Electron., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
Magnetically doped Fe:InP is demonstrated to provide 45/spl deg/ rotation at 1550 nm with only 1.66 dB insertion loss. Enhanced Faraday rotation in Fe:InGaAsP resonators and high-index contrast waveguides is also demonstrated.
Keywords :
Faraday effect; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; iron; optical losses; optical resonators; optical waveguides; refractive index; 1.66 dB; 1550 nm; Faraday rotation; Fe:InGaAsP resonators; InGaAsP:Fe; InP:Fe; high-index contrast waveguides; insertion loss; photonic integration;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
