The Impact of the Polarization Orientation on Laser SEE Modeling in Complex ICs

Author

Skorobogatov, Petr K. ; Sogoyan, Armen V. ; Davydov, Georgii G. ; Egorov, Andrey N. ; Savchenkov, Dmitriy V.

Author_Institution

Nat. Res. Nucl. Univ. MEPhI, Moscow, Russia

Volume

62

Issue

1

fYear

2015

fDate

Feb. 2015

Firstpage

195

Lastpage

201

Abstract

Numerical and experimental evaluation of the influence of laser radiation polarization orientation on ionization response of 180-nm and 90-nm CMOS ICs is performed. Comparative research is carried out to determine how the polarization of various sized laser beams affects the parameters of IC ionization response. The necessity of considering the orientation of laser radiation polarization for laser local radiation effect simulation is shown.

Keywords

CMOS integrated circuits; integrated circuit modelling; ionisation; laser beam effects; light polarisation; numerical analysis; radiation hardening (electronics); CMOS ICs; IC ionization response; complex ICs; laser SEE modeling; laser local radiation effect simulation; laser radiation polarization orientation; single event effect; size 180 nm; size 90 nm; sized laser beam polarization; Crystals; Integrated circuit modeling; Ionization; Laser beams; Laser modes; Metals; Laser polarization; SEE laser simulation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2387441

Filename

7027249