Title :
The Impact of the Polarization Orientation on Laser SEE Modeling in Complex ICs
Author :
Skorobogatov, Petr K. ; Sogoyan, Armen V. ; Davydov, Georgii G. ; Egorov, Andrey N. ; Savchenkov, Dmitriy V.
Author_Institution :
Nat. Res. Nucl. Univ. MEPhI, Moscow, Russia
Abstract :
Numerical and experimental evaluation of the influence of laser radiation polarization orientation on ionization response of 180-nm and 90-nm CMOS ICs is performed. Comparative research is carried out to determine how the polarization of various sized laser beams affects the parameters of IC ionization response. The necessity of considering the orientation of laser radiation polarization for laser local radiation effect simulation is shown.
Keywords :
CMOS integrated circuits; integrated circuit modelling; ionisation; laser beam effects; light polarisation; numerical analysis; radiation hardening (electronics); CMOS ICs; IC ionization response; complex ICs; laser SEE modeling; laser local radiation effect simulation; laser radiation polarization orientation; single event effect; size 180 nm; size 90 nm; sized laser beam polarization; Crystals; Integrated circuit modeling; Ionization; Laser beams; Laser modes; Metals; Laser polarization; SEE laser simulation;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2387441
