Title :
Room-temperature, mid-IR (/spl lambda/ = 4.7 /spl mu/m) electroluminescence from single-stage intersubband GaAs-based edge emitters
Author :
Xu, D.P. ; Mirabedini, A. ; D´Souza, M. ; Li, S. ; Botez, D. ; Shen, Y.F. ; Zory, P.
Author_Institution :
Reed Center for Photonics, Wisconsin Univ., Madison, WI
Abstract :
Strong room-temperature intersubband-emission is obtained at 4.7 microns by using deep quantum wells and high barriers in the active region. The emission linewidth is narrow (~20 meV) and the 80 K to 300 K emission ratio is low (~2)
Keywords :
III-V semiconductors; electroluminescence; gallium arsenide; infrared spectra; quantum well lasers; spectral line narrowing; 4.7 mum; 80 to 300 K; GaAs; GaAs-based edge emitters; deep quantum wells; electroluminescence; intersubband edge emitters; midIR emission; narrow emission linewidth; room-temperature emission; single-stage edge emitters;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
