DocumentCode
421901
Title
The role of the native oxide on silicon in femtosecond laser damage threshold studies at grazing incidence
Author
Picard, Yoosuf N. ; Yalisove, Steven M. ; McDonald, Joel P.
Author_Institution
Dept. of Mater. Sci. & Eng., Michigan Univ., Ann Arbor, MI, USA
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
Femtosecond laser ablation studies of silicon with and without the native oxide on the surface were conducted in an ultrahigh vacuum environment. SEM results show a clear difference in the laser intensity threshold for ablation.
Keywords
amorphous semiconductors; elemental semiconductors; high-speed optical techniques; laser ablation; scanning electron microscopy; silicon; silicon compounds; SEM; Si; SiO; femtosecond laser ablation; grazing incidence; laser damage threshold; laser intensity threshold; native oxide; silicon; ultrahigh vacuum environment;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361353
Link To Document