Title :
Optical Emission Characteristics of Pseudopolarization-Matched Green AlInGaN/InGaN Quantum Well Structures
Author :
Seoung-Hwan Park ; Doyeol Ahn
Author_Institution :
Dept. of Electron. Eng., Catholic Univ. of Daegu, Hayang, South Korea
Abstract :
Optical properties of pseudopolarization-matched green AlInGaN/InGaN quantum-well structures with a quaternary AlInGaN well layer were investigated by using non-Markovian gain model with many-body effects. We found that the emission peak can be enhanced by using quaternary AlInGaN well and is sensitive to the In composition in the InGaN barrier. The spontaneous emission coefficient shows a maximum at In composition of 0.22 in the barrier and gradually decreases with increasing In composition. The spontaneous emission coefficient of the AlInGaN/InGaN system with reduced internal field is shown to be increased by 70% compared to that of the conventional InGaN/GaN system. Beff of the AlInGaN/InGaN QW structure is much larger than that of the InGaN/GaN QW structure in the investigated range of the current density.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; semiconductor quantum wells; spontaneous emission; wide band gap semiconductors; AlInGaN-InGaN; current density; emission peak; internal field; many-body effects; nonMarkovian gain model; optical emission characteristics; optical properties; pseudopolarization-matched green quantum well structures; quaternary well layer; spontaneous emission coefficient; Charge carrier density; Gallium; Gallium nitride; Optical polarization; Photonic band gap; Spontaneous emission; Stimulated emission; AlInGaN; GaN; InGaN; laser; optical gain; quantum well (QW);
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2013.2241024
