• DocumentCode
    421938
  • Title

    A 0.6 W CW GaInNAs vertical external-cavity surface-emitting laser operating at 1.32 /spl mu/m

  • Author

    Smith, S.A. ; Hopkins, J.-M. ; Sun, H.D. ; Burns, D. ; Calvez, S. ; Dawson, M.D. ; Jouhti, T. ; Konttinen, J. ; Pessa, M.

  • Author_Institution
    Inst. of Photonics, Strathclyde Univ., Glasgow, UK
  • Volume
    1
  • fYear
    2004
  • fDate
    16-21 May 2004
  • Abstract
    We report the first high-power vertical external-cavity surface-emitting laser operating at 1.3 /spl mu/m. Continuous-wave output power greater than 0.6 W was achieved using a GaInNAs/GaAs structure capillary-bonded to a single-crystal diamond heatspreader.
  • Keywords
    III-V semiconductors; diamond; gallium compounds; indium compounds; infrared sources; laser cavity resonators; quantum well lasers; surface emitting lasers; thermo-optical effects; 0.6 W; 1.32 mum; C; GaInNAs laser; GaInNAs-GaAs; GaInNAs/GaAs structure; capillary bonding; continuous-wave laser; high-power laser; quantum well lasers; single-crystal diamond heatspreader; vertical external-cavity surface-emitting laser;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2004. (CLEO). Conference on
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-55752-777-6
  • Type

    conf

  • Filename
    1361400