DocumentCode
421957
Title
Lateral band-structure engineering in micromachined semiconductors
Author
Stievater, T.H. ; Rabinovich, W.S. ; Park, D. ; Goetz, Peter G. ; Boos, J.B. ; Katzer, D.S. ; Biermann, M.L.
Author_Institution
Naval Res. Lab., Washington, DC
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
We demonstrate that micromachining multiple quantum wells produces lateral (in-plane) modifications to the semiconductor band structure that are accurately modeled by finite-element analysis combined with an eight-level band-structure calculation
Keywords
III-V semiconductors; band structure; electro-optical effects; finite element analysis; micromachining; semiconductor quantum wells; III-V semiconductors; eight-level band-structure calculation; finite-element analysis; lateral band-structure engineering; micromachined semiconductors; micromachining; multiple quantum wells; semiconductor band structure;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361419
Link To Document