Title :
Effect of nitrogen concentration on carrier lifetime in GaAs based long wavelength (/spl lambda/ = 1.2-1.3 /spl mu/m) lasers
Author :
Anton, O. ; Patel, D. ; Menoni, C.S. ; Yeh, Jeng-Ya ; Mawst, L. ; Pikal, J.M. ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO
Abstract :
We show for the first time that the differential carrier lifetime (taud) of identical In0.4Ga0.6As/GaAs 0.85P0.15/GaAs single QW broad area lasers with and without the addition of nitrogen (lambda = 1.2-1.3 mum) significantly reduces with the incorporation of nitrogen
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; infrared sources; nitrogen; quantum well lasers; 1.2 to 1.3 mum; GaAs-base lasers; In0.4Ga0.6As-GaAs0.85P0.15 -GaAs:N; broad area lasers; carrier lifetime; long wavelength lasers; nitrogen concentration; single quantum well lasers;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
