DocumentCode
421977
Title
The effect of nitrogen in InGaAsN quantum well lasers
Author
Palmer, D.J. ; Smowton, G.M. ; Blood, P. ; Yeh, Jeng-Ya ; Mawst, L.J. ; Tansu, Nelson
Author_Institution
Dept. of Phys. & Astron., Cardiff Univ.
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
We compare the gain and radiative efficiency characteristics of an InGaAsN and InGaAs laser structures where the devices are identical except for the nitrogen content and emission wavelength
Keywords
III-V semiconductors; gallium arsenide; indium compounds; nitrogen; quantum well lasers; InGaAs laser structure; InGaAs:N; InGaAsN laser structure; emission wavelength; laser gain; nitrogen content; nitrogen effect; quantum well lasers; radiative efficiency;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361439
Link To Document