Title :
The effect of nitrogen in InGaAsN quantum well lasers
Author :
Palmer, D.J. ; Smowton, G.M. ; Blood, P. ; Yeh, Jeng-Ya ; Mawst, L.J. ; Tansu, Nelson
Author_Institution :
Dept. of Phys. & Astron., Cardiff Univ.
Abstract :
We compare the gain and radiative efficiency characteristics of an InGaAsN and InGaAs laser structures where the devices are identical except for the nitrogen content and emission wavelength
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; nitrogen; quantum well lasers; InGaAs laser structure; InGaAs:N; InGaAsN laser structure; emission wavelength; laser gain; nitrogen content; nitrogen effect; quantum well lasers; radiative efficiency;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
