DocumentCode
421980
Title
The temperature sensitivity of GaAs-based 1.5 /spl mu/m GaInNAsSb lasers
Author
Bank, S.R. ; Goddard, L.L. ; Wistey, M.A. ; Yuen, H.B. ; Harris, J.S., Jr.
Author_Institution
Solid State & Photonics Lab., Stanford Univ., CA
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
The temperature behavior of 1.5 mum GaInNAsSb edge-emitting lasers is analyzed through variation of cavity length and temperature. Monomolecular recombination and intervalence band absorption dominate the threshold current, and carrier leakage becomes important at elevated temperatures
Keywords
III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; quantum well lasers; thermo-optical effects; valence bands; 1.5 mum; GaAs-based lasers; GaInNAsSb; GaInNAsSb lasers; carrier leakage; cavity length variation; edge-emitting lasers; intervalence band absorption; monomolecular recombination; temperature sensitivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361443
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