Title :
Selective quantum well intermixing of 1.22 and 1.55 /spl mu/m GaInNAs laser material
Author :
Harris, J.L. ; Bryce, A.C. ; Kowalski, O.P. ; Marsh, J.H. ; Jouhti, T. ; Pessa, M. ; Hopkinson, Mark
Author_Institution :
Dept. of Electr. & Electron. Eng., Glasgow Univ., UK
Abstract :
Selective quantum well intermixing in 1.22 and 1.55 /spl mu/m GaInNAs/GaAs laser structures using a sputtered silica cap deposition process is reported. Controlled wavelength shifts of 60 and 93 nm were obtained in 1.22 and 1.55 /spl mu/m material respectively.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; nitrogen compounds; optical materials; photoluminescence; quantum well lasers; semiconductor quantum wells; sputter deposition; 1.22 mum; 1.55 mum; 60 nm; 93 nm; GaInNAs laser material; GaInNAs-GaAs; selective quantum well intermixing; sputtered silica cap deposition; wavelength shifts;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
