Title :
Electroluminescence evolution of Ge quantum-dot diodes with the fold number
Author :
Chen, K.T. ; Peng, Y.H. ; Hsu, C.H. ; Kuan, C.H. ; Liu, C.W. ; Chen, P.S.
Author_Institution :
Graduate Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
We observed intensity enchantment and blue shift versus temperature for a LEDs consisting of 30-fold Ge QDs. The diffusion length on p-side is controlled by temperature and will active more QDs at room temperature.
Keywords :
electroluminescence; elemental semiconductors; germanium; light emitting diodes; semiconductor quantum dots; spectral line shift; Ge; Ge quantum-dot diodes; LED; blue shift; diffusion length; electroluminescence; fold number; intensity enchantment;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
