Title :
Bandgap-tuned In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot lasers
Author :
Kim, S. ; Bryce, A.C. ; Smith, C.J.M. ; Kowalski, O.P. ; Yanson, D. ; Marsh, J.H. ; Kaiander, I. ; Sellin, R.L. ; Bimberg, D.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
Bandgap tuned quantum dot lasers were fabricated and their performance compared to lasers fabricated from as-grown material. The output spectrum of the tuned lasers was blueshifted by 84 nm and significantly narrower than the as-grown devices.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; indium compounds; laser tuning; optical fabrication; photoluminescence; quantum dot lasers; spectral line shift; 84 nm; In/sub 0.5/Ga/sub 0.5/As-GaAs; bandgap-tuned In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot lasers; blueshift; output spectrum;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
