Title :
Characteristics of 1.3 /spl mu/m AlGaInAs-based multiple quantum well tunnel injection lasers
Author :
Kim, J.Y. ; Park, S. ; Hwang, S.R. ; Kang, J.K. ; Lee, E.H. ; Lee, J.K. ; Jang, D.H. ; Kim, T.I.
Author_Institution :
Telecommun. R&D Center, Samsung Electron. Co., Suwon, South Korea
Abstract :
1.3 /spl mu/m AlGalnAs-based multiple quantum well tunnel injection lasers have been fabricated for the first time for high speed and uncooled operation. By introducing the tunnel barrier, we have improved a frequency bandwidth and a damping rate, while the low frequency roll-off is increased by increasing a diffusion capacitance.
Keywords :
III-V semiconductors; aluminium compounds; damping; gallium compounds; high-speed optical techniques; indium compounds; optical fabrication; quantum well lasers; 1.3 mum; AlGaInAs; damping rate; diffusion capacitance; frequency bandwidth; frequency roll-off; multiple quantum well tunnel injection lasers; tunnel barrier;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
