Title :
High power AlInGaP broad area lasers and laser bars in the visible range from 635 nm to 670 nm
Author :
Tautz, S. ; Karnutsch, C. ; Schmid, W. ; Maric, J. ; Butendeich, R. ; Streubel, K. ; Linder, N.
Author_Institution :
OSRAM Opto Semicond., Regensburg, Germany
Abstract :
We present visible high power AlInGaP lasers and laser bars from 635 nm to 670 nm. At room temperature we achieved 5.3 W of cw power at 642 nm from a 10 mm bar with an overall efficiency of 17%.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor lasers; 10 mm; 17 percent; 5.3 W; 635 to 670 nm; AlInGaP; broad area lasers; laser bars;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
