DocumentCode
422036
Title
A femtosecond laser-activated silicon reflection switch for electron-beam bunch length measurements
Author
Asazubi, R. ; Wilke, I. ; Zhong, H. ; Wang, S. ; Zhang, X.-C. ; Fisher, A. ; Bolton, P. ; Carr, R. ; Schlarb, H.
Author_Institution
Dept. of Phys., Rensselaer Polytech. Inst., Troy, NY, USA
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
We report an experimental study of the reflection of s- and p-polarized subpicosecond THz-radiation pulses from silicon. We propose silicon reflection switches for electron bunch length measurement via THz wake field diagnostics.
Keywords
elemental semiconductors; high-speed optical techniques; light polarisation; optical switches; particle beam bunching; silicon; submillimetre wave spectra; THz wake field diagnostics; electron-beam bunch length measurements; femtosecond laser-activated silicon reflection switch; p-polarized subpicosecond THz-radiation pulses; s-polarized subpicosecond THz-radiation pulses;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361500
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