DocumentCode
422048
Title
Picosecond response of metal-semiconductor-metal ultraviolet photodiodes
Author
Li, Jianliang ; Donaldson, W.R. ; Hsiang, T.Y.
Author_Institution
Material Sci. Program, Rochester Univ., NY, USA
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
We studied the ultrafast response in metal-semiconductor-metal ultraviolet photodiodes fabricated on GaN. The best performance of a device with 1-/spl mu/m finger width and spacing showed a 3.5-ps response. The pulse width broadened significantly as the optical energy increased.
Keywords
high-speed optical techniques; metal-semiconductor-metal structures; optical fabrication; photodiodes; 1 mum; 3.5 ps; GaN; metal-semiconductor-metal ultraviolet photodiodes; optical energy; picosecond response; pulse width;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361513
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