Title :
Ultraviolet and blue emission properties of Tm doped AlGaN and AlN
Author :
Nyein, Ei Ei ; Hömmerich, U. ; Zavada, J.M. ; Lee, D.S. ; Steckl, A.J. ; Nepal, N. ; Lin, J.Y. ; Jiang, H.X.
Author_Institution :
Dept. of Phys., Hampton Univ., VA, USA
Abstract :
We report on the ultraviolet (UV) and blue emission properties of Tm doped AlGaN/AIN thin films under above- and below bandgap excitation. UV (/spl sim/300-350 nm) and blue (/spl sim/465 nm) emission lines of Tm/sup 3+/ ions are of interest for potential applications in chemical/biological sensing, full color displays, and solid-state lightening.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; optical films; photoluminescence; semiconductor thin films; thulium; ultraviolet spectra; visible spectra; AlGaN:Tm; AlN:Tm; UV emission; bandgap excitation; biological sensing; blue emission properties; chemical sensing; full color displays; solid-state lightening; ultraviolet emission;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
