Title :
Room temperature photoluminescence of MBE grown single quantum wells on InGaAs graded buffers
Author :
Choy, H.K.H. ; Fonstad, C.G., Jr.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, MA, USA
Abstract :
We present room temperature photoluminescence studies of InGaAs single quantum wells grown on top of In/sub 0/spl rarr/x/Ga/sub 1/spl rarr/(1-x)/As graded buffers (0.05\n\n\t\t
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical materials; photoluminescence; rapid thermal annealing; semiconductor growth; semiconductor quantum wells; 20 degC; InGaAs; InGaAs graded buffers; MBE; rapid thermal annealing; room temperature photoluminescence; single quantum wells;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
