Title :
Optical properties of free-standing InP semiconductor nanowires
Author :
González, J.C. ; Ugarte, D. ; Matinaga, F.M. ; Gutierrez, H.R. ; Cotta, M.A.
Author_Institution :
Dept. de Fisica, Univ. Fed. de Minas Gerais, Campinas, Brazil
Abstract :
Growth and optical properties of InP nanowires will be presented. These wires (30 to 100 nm in diameter and longer than 5000 nm) were obtained by the vapor-liquid-solid growth in a chemical beam epitaxy reactor.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; indium compounds; liquid-vapour transformations; nanowires; optical materials; photoluminescence; semiconductor growth; semiconductor quantum wires; solid-liquid transformations; 30 to 100 nm; InP; chemical beam epitaxy reactor; free-standing InP semiconductor nanowires; optical properties; vapor-liquid-solid growth;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
