DocumentCode
422292
Title
Site selective spectroscopy of energy transfer processes in Er doped GaN
Author
Dierolf, V. ; Sandmann, C. ; Zavada, J.M. ; Chow, P. ; Hertog, B.
Author_Institution
SVT Associates, Inc., Eden Prairie, MN, USA
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
Using the site selectivity of combined excitation-emission spectroscopy, we have identified six different Er/sup 3+/ centers in GaN and investigated their role in energy transfer from other ions and electron-hole pairs.
Keywords
III-V semiconductors; erbium; gallium compounds; optical materials; photoluminescence; wide band gap semiconductors; Er doped GaN; GaN:Er/sup 3+/; electron-hole pairs; energy transfer; excitation-emission spectroscopy; site selective spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361767
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