Forward to the Special Section on “Reliability of High-Mobility Channel Materials”

The ten papers in this special section are broken into two groups. The first group of six papers discusses the impact of different types of charge traps in the gate oxide or at its interface with the channel semiconductor on the performance, reliability and variability of high-mobility channel devices. The second group of four papers focuses specifically on BTI in high-mobility devices, suggesting that BTI is the main reliability issue not only in silicon devices but also in these new materials.