• DocumentCode
    422305
  • Title

    Highly linear and efficient GaInAsP-InP phase modulators

  • Author

    Mohseni, H. ; An, E. ; Shellenbarger, Z.A. ; Kwakernaak, M.H. ; Lepore, A.N. ; Abeles, J.H. ; Delfyett, P.J.

  • Author_Institution
    Sarnoff Corp., Princeton, NJ
  • Volume
    1
  • fYear
    2004
  • fDate
    16-21 May 2004
  • Abstract
    Highly linear and efficient InGaAsP phase modulators are presented. These devices show an order of magnitude higher linearity than bulk or quantum well phase modulators, while their efficiency is comparable to the best reported values
  • Keywords
    III-V semiconductors; electro-optical modulation; gallium compounds; indium compounds; phase modulation; quantum well devices; semiconductor quantum wells; GaInAsP-InP; GaInAsP-InP phase modulators; quantum well phase modulators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2004. (CLEO). Conference on
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-55752-777-6
  • Type

    conf

  • Filename
    1361793
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=422305