Title :
Highly linear and efficient GaInAsP-InP phase modulators
Author :
Mohseni, H. ; An, E. ; Shellenbarger, Z.A. ; Kwakernaak, M.H. ; Lepore, A.N. ; Abeles, J.H. ; Delfyett, P.J.
Author_Institution :
Sarnoff Corp., Princeton, NJ
Abstract :
Highly linear and efficient InGaAsP phase modulators are presented. These devices show an order of magnitude higher linearity than bulk or quantum well phase modulators, while their efficiency is comparable to the best reported values
Keywords :
III-V semiconductors; electro-optical modulation; gallium compounds; indium compounds; phase modulation; quantum well devices; semiconductor quantum wells; GaInAsP-InP; GaInAsP-InP phase modulators; quantum well phase modulators;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
