DocumentCode
422324
Title
Highly efficient light emission from III-nitride photonic crystal
Author
Chen, Lu ; Nurmikko, Arto V. ; Krames, M.
Author_Institution
Dept. of Phys., Brown Univ., Providence, RI
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
Photonic crystal LEDs based on InGaN/GaN QWs was fabricated and exhibited eight-fold enhancement of light emission in far field. Polarization and pumping condition dependence of photonic crystal light emission were further studied
Keywords
gallium compounds; indium compounds; light emitting diodes; photonic crystals; semiconductor quantum wells; wide band gap semiconductors; III-nitride photonic crystal; InGaN-GaN; InGaN/GaN QW; photonic crystal LED;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361820
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