DocumentCode :
422339
Title :
Quasiperiodic photonic crystal microlaser with defect
Author :
Nozaki, K. ; Baba, T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Yokohama Nat. Univ.
Volume :
1
fYear :
2004
fDate :
16-21 May 2004
Abstract :
We demonstrated a GaInAsP quasiperiodic photonic crystal microlaser with a point defect at room temperature, for the first time. The lasing was observed not only at the defect but also outside of the defect
Keywords :
III-V semiconductors; gallium compounds; indium compounds; microcavity lasers; photonic crystals; semiconductor lasers; 20 degC; GaInAsP; GaInAsP quasiperiodic photonic crystal microlaser; point defect; room temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
Type :
conf
Filename :
1361835
Link To Document :
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