DocumentCode
422339
Title
Quasiperiodic photonic crystal microlaser with defect
Author
Nozaki, K. ; Baba, T.
Author_Institution
Dept. of Electr. & Comput. Eng., Yokohama Nat. Univ.
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
We demonstrated a GaInAsP quasiperiodic photonic crystal microlaser with a point defect at room temperature, for the first time. The lasing was observed not only at the defect but also outside of the defect
Keywords
III-V semiconductors; gallium compounds; indium compounds; microcavity lasers; photonic crystals; semiconductor lasers; 20 degC; GaInAsP; GaInAsP quasiperiodic photonic crystal microlaser; point defect; room temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361835
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