DocumentCode
42235
Title
Silicon Drift Detectors and CUBE Preamplifiers for High-Resolution X-ray Spectroscopy
Author
Quaglia, R. ; Bombelli, L. ; Busca, P. ; Fiorini, C. ; Occhipinti, M. ; Giacomini, G. ; Ficorella, F. ; Picciotto, A. ; Piemonte, C.
Author_Institution
Dipt. di Elettron., Inf. e Bioingegneria, Politec. di Milano, Milan, Italy
Volume
62
Issue
1
fYear
2015
fDate
Feb. 2015
Firstpage
221
Lastpage
227
Abstract
In this work we present the results of the experimental characterization of Silicon Drift Detectors (SDDs) readout by CUBE preamplifiers for X-ray spectroscopy measurements. One specific goal of the work was to characterize SDDs of different sizes cooled at low temperature in view of their use in the upgrade of the SIDDHARTA nuclear physics experiment. Beside the target application, the results of this work are also of interest for a more extended use of the SDDs in other X-ray spectroscopy applications. The SDDs have been designed as single units with square shape of different areas, 64 mm2 (8 mm × 8 mm) and 144 mm2 (12 mm × 12 mm), and also as monolithic array of 3×3 elements of the 8 mm × 8 mm unit (total area 26 mm × 26 mm). The read-out of the SDDs is based on a CMOS (Complementary Metal Oxide Semiconductor) preamplifier (CUBE) both for the single unit and for the 3×3 array. For the readout of the array, an Application Specific Integrated Circuit (ASIC) has been used. An energy resolution better than 124 eV at the Mn-Kα line has been measured with a 64 mm2 SDD cooled at the temperature of 50 K. The energy resolution remains good (<;130 eV) also at short shaping time (250 ns) thanks to the noise feature of the CUBE preamplifier. Results of measurements on SDDs of different format and also on arrays of SDDs are presented in this work.
Keywords
CMOS integrated circuits; X-ray spectroscopy; application specific integrated circuits; drift chambers; readout electronics; silicon radiation detectors; ASIC; CMOS preamplifier; CUBE preamplifiers; Mn-Kα line; SDD; SIDDHARTA nuclear physics experiment; X-ray spectroscopy measurements; application specific integrated circuit; complementary metal oxide semiconductor preamplifier; high-resolution X-ray spectroscopy; monolithic array; readout; silicon drift detectors; target application; temperature 50 K; Arrays; Detectors; Energy measurement; Energy resolution; Noise; Spectroscopy; Temperature measurement; Charge preamplifier; X-ray spectroscopy; silicon drift detectors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2014.2379941
Filename
7027255
Link To Document