• DocumentCode
    422383
  • Title

    Semiconductor-based carrier-envelope phase detector

  • Author

    Jirauschek, Christian ; Duan, Lingze ; Mucke, Oliver D. ; Kaertner, Franz ; Hof, Klaus D. ; Trirschler, T. ; Wegener, Martin

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • Volume
    1
  • fYear
    2004
  • fDate
    16-21 May 2004
  • Abstract
    We study the carrier-envelope phase sensitivity of the inversion in a two-band semiconductor and the influence of rapid dephasing of higher-lying states. The application of this effect for constructing a solid-state phase detector is investigated.
  • Keywords
    conduction bands; high-speed optical techniques; nonlinear optics; phase detectors; semiconductor device models; valence bands; carrier-envelope phase detector; rapid dephasing; two-band semiconductor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2004. (CLEO). Conference on
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    1-55752-777-6
  • Type

    conf

  • Filename
    1361891