DocumentCode
422458
Title
120/spl deg/C uncooled operation of direct modulated 1.3/spl mu/m AlGaInAs-MQW DFB laser diodes for 10Gb/s telecom applications
Author
Shirai, Satoshi ; Tatsuoka, Y. ; Watatani, C. ; Ota, T. ; Takagi, K. ; Aoyagi, T. ; Omura, E. ; Tomita, T.
Author_Institution
High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan
Volume
2
fYear
2004
fDate
23-27 Feb. 2004
Abstract
1.3 /spl mu/m AlGaInAs-MQW DFB laser diodes were fabricated for 10 Gb/s uncooled light sources. Applying an n-InGaAsP/n-InP buried grating, output power of 5 mW at 120/spl deg/C and clear eye opening at 105/spl deg/C for OC-192 mask was obtained.
Keywords
III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium compounds; indium compounds; light sources; optical communication; optical fabrication; optical modulation; quantum well lasers; 1.3 micron; 10 Gbit/s; 105 C; 120 C; 5 mW; AlGaInAs; AlGaInAs-MQW DFB laser diode fabrication; InGaAsP-InP; OC-192 mask; direct modulation; light sources; n-InGaAsP/n-InP buried grating; telecom application;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference, 2004. OFC 2004
Conference_Location
Los Angeles, CA, USA
Print_ISBN
1-55752-772-5
Type
conf
Filename
1362072
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