DocumentCode :
422463
Title :
VCSELs emitting in the 1550 nm waveband with 0.6 mW single mode output in 20-80/spl deg/C temperature range
Author :
Sirbu, A. ; Mereuta, A. ; Mircea, A. ; Iakovlev, V. ; Berseth, C.-A. ; Suruceanu, G. ; Caliman, A. ; Achtenhagen, M. ; Rudra, A. ; Kapon, E.
Author_Institution :
BeamExpress S.A., Lausanne, Switzerland
Volume :
2
fYear :
2004
fDate :
23-27 Feb. 2004
Abstract :
Wafer fused 7 /spl mu/m aperture InGaAlAs/AlGaAs VCSELs with InAlGaAs-based tunnel junction injection show record high 0.6 mW single mode output, 30 dB side-mode suppression ratio and 9/spl deg/ full width at half maximum in 20-80/spl deg/C temperature range.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; surface emitting lasers; 0.6 mW; 1550 nm; 20 to 80 C; InGaAlAs-AlGaAs; VCSEL; side-mode suppression ratio; tunnel junction injection; wafer fusion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication Conference, 2004. OFC 2004
Conference_Location :
Los Angeles, CA, USA
Print_ISBN :
1-55752-772-5
Type :
conf
Filename :
1362077
Link To Document :
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