Title :
Improving optical performance of AlGaN quantum wells
Author :
Wieczorek, S. ; Fischer, A.J. ; Lee, S.R. ; Allerman, A.A. ; Crawford, M.H. ; Chow, W.W.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
A method for mitigating internal electric field effects and improving optical performance of AlGaN quantum wells is described. The underlying mechanism is the significant difference between the z-direction effective hole masses for the heavy-hole and crystal-split-hole bands.
Keywords :
III-V semiconductors; aluminium compounds; band structure; gallium compounds; semiconductor quantum wells; wide band gap semiconductors; AlGaN; AlGaN quantum wells; crystal-split-hole bands; effective hole masses; heavy-hole bands; internal electric field effect mitigation; optical performance; Aluminum gallium nitride; Biomedical optical imaging; Laboratories; Light emitting diodes; Optical sensors; Quantum well lasers; Quantum wells; Spontaneous emission; Stimulated emission; Ultra wideband technology;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363091
