Title :
Design concept for 2800 V/2000 A GCT
Author :
Wang, Cailin ; Gao, Yong ; TaoAn
Author_Institution :
Dept. of Electron. Eng., Xi´´an Univ. of Technol., China
Abstract :
Some new design concept for structure parameters of key regions of the reverse conducting gate commutated thyristor (GCT), such as n base region, n buffer layer, separation region and transparent anode region is presented in this paper. A reverse conducting GCT´s structure model is set up based on the design concept and its I-V characteristic, conducting characteristic and the reverse characteristic of gate-cathode junction are analyzed by using MEDICI simulator. The simulation results show the design concept is reasonable. Lastly, the cathode layout of the 2800 V/2000 A reverse conducting GCT is given based on this structure model.
Keywords :
buffer layers; design engineering; power engineering computing; thyristor applications; thyristors; 2000 A; 2800 V; GCT; I-V characteristic; MEDICI simulator; base region; buffer layer; conducting characteristic; gate-cathode junction; reverse characteristic; reverse conducting gate commutated thyristor; separation region; transparent anode region;
Conference_Titel :
Power Electronics and Motion Control Conference, 2004. IPEMC 2004. The 4th International
Conference_Location :
Xi´an
Print_ISBN :
7-5605-1869-9