DocumentCode
422788
Title
A novel model for MOSFET switching loss calculation
Author
Bai, Yuming ; Meng, Yu ; Huang, Alex Q. ; Lee, Fred C.
Author_Institution
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Volume
3
fYear
2004
fDate
14-16 Aug. 2004
Firstpage
1669
Abstract
A novel model for low voltage (30 V) MOSFET switching loss calculation is presented in this paper, which takes into account the effect of parasitic Ls and other major parasitics in the loss calculation, giving more insight of the MOSFET switching process. Based on this model, high frequency topologies of 12 V VRM (voltage regulator module) can be conveniently analyzed and evaluated from the efficiency point of view.
Keywords
DC-DC power convertors; field effect transistor switches; losses; voltage regulators; 12 V; 30 V; DC-DC converters; MOSFET switching loss calculation; metal-oxide-semiconductor field effect transistor; power loss; voltage regulator module;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Motion Control Conference, 2004. IPEMC 2004. The 4th International
Conference_Location
Xi´an
Print_ISBN
7-5605-1869-9
Type
conf
Filename
1376998
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