DocumentCode :
422788
Title :
A novel model for MOSFET switching loss calculation
Author :
Bai, Yuming ; Meng, Yu ; Huang, Alex Q. ; Lee, Fred C.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Volume :
3
fYear :
2004
fDate :
14-16 Aug. 2004
Firstpage :
1669
Abstract :
A novel model for low voltage (30 V) MOSFET switching loss calculation is presented in this paper, which takes into account the effect of parasitic Ls and other major parasitics in the loss calculation, giving more insight of the MOSFET switching process. Based on this model, high frequency topologies of 12 V VRM (voltage regulator module) can be conveniently analyzed and evaluated from the efficiency point of view.
Keywords :
DC-DC power convertors; field effect transistor switches; losses; voltage regulators; 12 V; 30 V; DC-DC converters; MOSFET switching loss calculation; metal-oxide-semiconductor field effect transistor; power loss; voltage regulator module;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Motion Control Conference, 2004. IPEMC 2004. The 4th International
Conference_Location :
Xi´an
Print_ISBN :
7-5605-1869-9
Type :
conf
Filename :
1376998
Link To Document :
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