DocumentCode
422884
Title
Characteristics analysis of transparent anode GTO
Author
Wang, Cailin ; Gao, Yong ; An, Tao ; Ma, Li
Author_Institution
Dept. of Electron. Eng., Xi´´an Univ. of Technol.
Volume
1
fYear
2004
fDate
14-16 Aug. 2004
Firstpage
338
Abstract
The characteristics of three GTO structures with conventional, short and transparent anode, that is, GTO, SAGTO and TAGTO, are analyzed by using MEDICI simulator. The characteristics of TAGTO are illustrated by comparing with GTO and SAGTO. The results show that the transparent anode with an additional n-layer buffer used in TAGTO devices can further improve its blocking and switching characteristics simultaneity, and hardly effect on its conducting characteristics. Lastly, the mechanism of the transparent anode is revealed by analyzing the switching characteristic of the TAGTO
Keywords
commutation; power bipolar transistors; power engineering computing; thyristors; GTO; MEDICI simulator; blocking characteristics; gate commutated thyristor; high voltage insulated gate bipolar transistor; injection efficiency; n-layer buffer; power semiconductor devices; short anode gate-off thyristor; switching characteristics; transparent anode gate-off thyristor;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Motion Control Conference, 2004. IPEMC 2004. The 4th International
Conference_Location
Xi´an
Print_ISBN
7-5605-1869-9
Type
conf
Filename
1377838
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