DocumentCode :
422884
Title :
Characteristics analysis of transparent anode GTO
Author :
Wang, Cailin ; Gao, Yong ; An, Tao ; Ma, Li
Author_Institution :
Dept. of Electron. Eng., Xi´´an Univ. of Technol.
Volume :
1
fYear :
2004
fDate :
14-16 Aug. 2004
Firstpage :
338
Abstract :
The characteristics of three GTO structures with conventional, short and transparent anode, that is, GTO, SAGTO and TAGTO, are analyzed by using MEDICI simulator. The characteristics of TAGTO are illustrated by comparing with GTO and SAGTO. The results show that the transparent anode with an additional n-layer buffer used in TAGTO devices can further improve its blocking and switching characteristics simultaneity, and hardly effect on its conducting characteristics. Lastly, the mechanism of the transparent anode is revealed by analyzing the switching characteristic of the TAGTO
Keywords :
commutation; power bipolar transistors; power engineering computing; thyristors; GTO; MEDICI simulator; blocking characteristics; gate commutated thyristor; high voltage insulated gate bipolar transistor; injection efficiency; n-layer buffer; power semiconductor devices; short anode gate-off thyristor; switching characteristics; transparent anode gate-off thyristor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Motion Control Conference, 2004. IPEMC 2004. The 4th International
Conference_Location :
Xi´an
Print_ISBN :
7-5605-1869-9
Type :
conf
Filename :
1377838
Link To Document :
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