Title :
A high performance 4H-SiC normally-off VJFET
Author :
Zhao, J.H. ; Tone, K. ; Sheng, Kun ; Li, X. ; Alexandrov, P. ; Fursin, L. ; Weiner, M. ; Burke, T.
Author_Institution :
ECE Dept., Rutgers Univ., Piscataway, NJ
Abstract :
This paper presents the design, fabrication and characterisation of a high performance 4H-SiC normally-off, trenched and implanted vertical junction field-effect transistor (VJFET). Devices with different trenched mesa widths were designed and their performance investigated. The fabricated VJFETs demonstrated a 3.9Omega resistance at VG=5 V (with negligible gate current) and JD=154 A/cm2, corresponding to a low specific on-resistance of 3.7 mOmegacm2 for a normally-off VJFET blocking voltage up to 1,734 V (at VG=0 V). The specific on-resistance is more than 200 times smaller than that of the theoretical limit of Si FETs. The figure-of-merit (FOM, Vbt 2/RON-sp), is equal to 815 MW/cm2 for the demonstrated VJFET, substantially surpassing the best FOM of any kind of unipolar and bipolar SiC power switches
Keywords :
carbon compounds; electric resistance; junction gate field effect transistors; power semiconductor switches; semiconductor device packaging; silicon compounds; wide band gap semiconductors; 1734 V; 3.9 ohm; 5 V; Si FET; SiC; VJFET; bipolar SiC power switches; blocking voltage; device fabrication; silicon carbide; specific on-resistance; vertical junction field-effect transistor;
Conference_Titel :
Power Electronics and Motion Control Conference, 2004. IPEMC 2004. The 4th International
Conference_Location :
Xi´an
Print_ISBN :
7-5605-1869-9