Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

Author

Kuan-Chang Chang ; Tsung-Ming Tsai ; Ting-Chang Chang ; Kai-Huang Chen ; Rui Zhang ; Zhi-Yang Wang ; Jung-Hui Chen ; Tai-Fa Young ; Min-Chen Chen ; Tian-Jian Chu ; Syuan-Yong Huang ; Yong-En Syu ; Ding-Hua Bao ; Sze, Simon M.

Author_Institution

Dept. of Mater. & Optoelectron. Sci., Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan

Volume

35

Issue

5

fYear

2014

fDate

May-14

Firstpage

530

Lastpage

532

Abstract

In this letter, dual ion effect induced reset process of lithium silicate resistance random access memory (RRAM) devices is studied and discussed. Unlike the traditional silicon oxide-based RRAM, lithium ions also participate in the resistive switching process except for the oxygen ions. Owing to the twofold chemical reaction, the high resistance states are randomly distributed in a wide range. Schottky emission can be obtained through conduction current fitting, and a reaction model is established to demonstrate the special behaviors of the two types of ions, which also clarifies the gradual change of current fitting results.

Keywords

chemical reactions; lithium compounds; random-access storage; RRAM devices; Schottky emission; conduction current fitting; dual ion effect induced reset process; high resistance states; lithium ions; lithium silicate resistance random access memory devices; oxygen ions; reaction model; resistive switching process; twofold chemical reaction; Electrodes; Ions; Lithium; Resistance; Silicon; Switches; Tin; I-V; I-V.; RRAM; dual ion effect; lithium silicate;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2311295

Filename

6775286