A 200 GHz Medium Power Amplifier MMIC in Cascode Metamorphic HEMT Technology

Author

Campos-Roca, Y. ; Tessmann, A. ; Amado-Rey, Belen ; Wagner, Steffen ; Massler, Hermann ; Hurm, V. ; Leuther, A.

Author_Institution

Dept. of Comput. & Commun. Technol., Univ. de Extremadura, Caceres, Spain

Volume

24

Issue

11

fYear

2014

fDate

Nov. 2014

Firstpage

787

Lastpage

789

Abstract

A 200 GHz power amplifier is presented. The millimeter-wave monolithic integrated circuit (MMIC) has been realized in a 35 nm InAlAs/InGaAs cascode metamorphic high electron mobility transistor (MHEMT) process in grounded coplanar waveguide technology (GCPW). The amplifier demonstrates an output power of 14 mW with 11.4 dB compressed power gain at 200 GHz. This represents an increase in output power in comparison to previous reported MHEMT-based MMIC amplifiers. The small-signal gain demonstrates a peak value of 20 dB and is above 15.9 dB from 185 to 215 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave power amplifiers; InAlAs-InGaAs; cascode metamorphic HEMT technology; frequency 185 GHz to 215 GHz; gain 11.4 dB; gain 20 dB; high electron mobility transistor process; medium power amplifier MIMIC; millimeter wave monolithic integrated circuit; power 14 mW; size 35 nm; Coplanar waveguides; MMICs; Power amplifiers; Power generation; mHEMTs; Cascode HEMT; G-band; grounded coplanar waveguide (GCPW); metamorphic high electron mobility transistor (MHEMT); millimeter-wave monolithic integrated circuit (MMIC); power amplifier (PA);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2014.2348861

Filename

6882251