Title :
A Comparative Study of MOS VCOs for Low Voltage High Performance Operation
Author :
Zhan, J.H.C. ; Duster, J.S. ; Kornegay, K.T.
Author_Institution :
Cornell University, Ithaca, New York
Abstract :
Six 10GHz MOS VCOs were designed and fabricated in the IBM 6RF 0.25um CMOS process. Their oscillation frequency, output amplitude and phase noise performance are measured and compared, and the results confirm that replacing shielded-ground inductors with high-resistvity substrate inductors improves phase noise performance. Capacitive source degeneration has also been identified as a performance limiting mechanism in MOS based VCOs rather than performance enhancing as in BJT based VCOs.
Keywords :
FOM; Low power; Low voltage; Phase Noise; RF Design; VCO; FOM; Low power; Low voltage; Phase Noise; RF Design; VCO;
Conference_Titel :
Low Power Electronics and Design, 2004. ISLPED '04. Proceedings of the 2004 International Symposium on
Conference_Location :
Newport Beach, CA, USA
Print_ISBN :
1-58113-929-2
