DocumentCode :
4258
Title :
Dielectric Breakdown of 
Bi-Layer Gate Dielectric
Author :
Sahoo, K.C. ; Oates, Anthony S.
Author_Institution :
R&D Dept., Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
Volume :
14
Issue :
1
fYear :
2014
fDate :
Mar-14
Firstpage :
327
Lastpage :
332
Abstract :
We investigate the dielectric breakdown of aluminum oxide (Al2O3) interfacial layers compared with SiO2 used in the high- k gate dielectric stacks. We predict the maximum operating voltage for a ten-year lifetime, using extracted values of Weibull β, voltage power law exponent (n), and breakdown voltage. We show that the Al2O3 interface layer reliability is sufficient for it to be considered as a replacement for SiO2.
Keywords :
MOSFET; Weibull distribution; aluminium compounds; electric breakdown; hafnium compounds; high-k dielectric thin films; semiconductor device reliability; Al2O3-HfO2; Weibull distribution; bilayer gate dielectric; dielectric breakdown; high-K gate dielectric stack; interface layer reliability; interfacial layer; maximum operating voltage; voltage power law exponent; Acceleration; Aluminum oxide; Breakdown voltage; Dielectric breakdown; Materials reliability; Stress; $hbox{Al}_{2}hbox{O}_{3}$
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2013.2292940
Filename :
6677579
Link To Document :
