Dielectric Breakdown of $\\hbox {Al}_{2}\\hbox {O}_{3}/ \\hbox {HfO}_{2}$ Bi-Layer Gate Dielectric

Author

Sahoo, K.C. ; Oates, Anthony S.

Author_Institution

R&D Dept., Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan

Volume

14

Issue

1

fYear

2014

fDate

Mar-14

Firstpage

327

Lastpage

332

Abstract

We investigate the dielectric breakdown of aluminum oxide (Al₂O₃) interfacial layers compared with SiO₂ used in the high- k gate dielectric stacks. We predict the maximum operating voltage for a ten-year lifetime, using extracted values of Weibull β, voltage power law exponent (n), and breakdown voltage. We show that the Al₂O₃ interface layer reliability is sufficient for it to be considered as a replacement for SiO₂.

Keywords

MOSFET; Weibull distribution; aluminium compounds; electric breakdown; hafnium compounds; high-k dielectric thin films; semiconductor device reliability; Al₂O_3-HfO₂; Weibull distribution; bilayer gate dielectric; dielectric breakdown; high-K gate dielectric stack; interface layer reliability; interfacial layer; maximum operating voltage; voltage power law exponent; Acceleration; Aluminum oxide; Breakdown voltage; Dielectric breakdown; Materials reliability; Stress; $hbox{Al}_{2}hbox{O}_{3}$; EOT scaling; TDDB; VRS; aluminum oxide; dielectric breakdown; voltage ramp stress;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2013.2292940

Filename

6677579

Dielectric Breakdown of Bi-Layer Gate Dielectric

Sahoo, K.C. ; Oates, Anthony S.

jour

Dielectric Breakdown of $\\hbox {Al}_{2}\\hbox {O}_{3}/ \\hbox {HfO}_{2}$ Bi-Layer Gate Dielectric